Energy Distribution and Yield Measurement of Secondary Electrons to Evaluate the Equilibrium Charging Voltage of an Isolated Electrode during Negative-Ion Implantation
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概要
- 論文の詳細を見る
The negative-ion implantation method has the advantage that the charging voltage of an isolated electrode, or electrically insulated conductive material, stays as low as at most +10 V during implantation without any charge neutralization. The significant parameters, the energy distribution and the yield of secondary electrons in negative-ion implantation, have been measured in the energy range below 40 keV. The results show that the energy distribution, which is independent of ion energy in shape, has a low energy peak together with a long tail extending toward the high-energy region, and that the yield increases with ion energy. Furthermore, the equilibrium charging-voltage equation of an isolated electrode during negative-ion implantation is presented. The charging voltages estimated according to the equation are found to be in good agreement with those measured directly with a high-input-impedance voltmeter. It is also demonstrated that the charging voltage is proportional to the yield and to ion velocity in the linear region of the kinetic electron emission.
- 社団法人応用物理学会の論文
- 1995-12-15
著者
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TSUJI Hiroshi
Department of Electronic Science and Engineering, Kyoto University
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GOTOH Yasuhito
Department of Electronic Science and Engineering, Kyoto University
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ISHIKAWA Junzo
Department of Electronics and Information Engineering, Chubu University
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Gotoh Y
Tsukuba Univ. Ibaraki Jpn
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Gotoh Yasuhito
Department Of Electronic Science And Engineering Kyoto University
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Gotoh Yoshikazu
Information Equipment Research Laboratory
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TOYOTA Yoshitaka
Department of Communication Network Engineering, Okayama University
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Toyota Yoshitaka
Department Of Communication Network Engineering Okayama University
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Toyota Yoshitaka
Department Of Electronic Science And Engineering Kyoto University
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Tsuji Hiroshi
Department Of Applied Physics Faculty Of Engineering Osaka City University
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Ishikawa Junzo
Department of Electronic Science and Engineering, Kyoto University,
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