Formation and Control of Stoichiometric Hafnium Nitride Thin Films by Direct Sputtering of Hafnium Nitride Target
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概要
- 論文の詳細を見る
Hafnium nitride thin films were prepared by radio-frequency magnetron sputter deposition with a hafnium nitride target. Deposition was performed with various rf powers, argon pressures, and substrate temperatures, in order to investigate the influences of these parameters on the film properties, particularly the nitrogen composition. It was found that stoichiometric hafnium nitride films were formed at an argon gas pressure of less than 2 Pa, irrespective of the other deposition parameters within the range investigated. Maintaining the nitrogen composition almost stoichiometric, orientation, stress, and electrical resistivity of the films could be controlled with deposition parameters.
- Japan Society of Applied Physicsの論文
- 2003-07-01
著者
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ISHIKAWA Junzo
Department of Electronics and Information Engineering, Chubu University
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Gotoh Yasuhito
Department Of Electronic Science And Engineering Kyoto University
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Tsuji Hiroshi
Department Of Applied Physics Faculty Of Engineering Osaka City University
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Liao Mei
Ion Beam Engineering Experimental Laboratory, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Tsuji Hiroshi
Department of Electronic Science and Engineering, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Gotoh Yasuhito
Department of Electronic Science and Engineering, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Ishikawa Junzo
Department of Electronic Science and Engineering, Kyoto University,
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Ishikawa Junzo
Department of Electronic Science and Engineering, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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