Fabrication of Nitrogen-Doped Diamond Field Emitter Utilizing Porous Silicon and Molding Technique
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-01-15
著者
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IIDA Masamori
Department of Information and Network, Tokai University Junior College
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KUROSU Tateki
Department of Electronics, School of Information Technology and Electronics, Tokai University
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KIMURA Hideki
Department of Electronics, School of Information Technology and Electronics, Tokai University
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Kurosu T
Department Of Electronics School Of Information Technology And Electronics Tokai University
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Inoue Kouji
Sony Corporation Atsugi Technology Center No.2
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Kimura H
Department Of Electronics School Of Information Technology And Electronics Tokai University
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Kimura H
Institute For Materials Research Tohoku University
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KIYOTA Hideo
Department of Electronics, School of Engineering, Tokai University
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Ri Sung
Department Of Electronics School Of Engineering Tokai University
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Kimura Hideki
Department Of Electronics
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Kurosu Tateki
Department Of Electronics Faculty Of Engineering Tokai University
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Iida M
Department Of Information And Network Tokai University Junior College
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Iida Masamori
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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SAITO Ichiro
Sony Corporation Information Systems Research Center
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TAKIDA Takayuki
Department of Electronics, School of Engineering, Tokai University
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RI Sung-Gi
Department of Electronics, School of Engineering, Tokai University
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TAKEMURA Takashi
Course of Electronics
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Kimura Hideki
Department Of Clinical Laboratory Medicine And Nephrology Faculty Of Medicine Fukui Medical Universi
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Ri Sung-gi
Department Of Electronics School Of Engineering Tokai University
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Kimura Hideki
Department Of Chemistry And Biotechnology Graduate School Of Engineering The University Of Tokyo
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Saito Ichiro
Sony Corporation Atsugi Technology Center No.2
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KUROSU Tateki
Department of Electronics
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