Analytical Examinations of Negative Resistance Due to Double Injection Model
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概要
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Well-known mechanisms of current controlled negative resistance in junction diode containing deep impurities are examined by using a criterion function developed by authors. One of these mechanisms is transit time modulation mechanism proposed byLampert and the other is optical feedback process developed by Dumke. Physical conditions for the occurrence of negative resistance are obtained by applying the criterion to these model: (1) the capture cross-section of deep impurity center for hole is larger than one for free electron, (2) the density of deep impurity center is sufficiently high. In the case of Dumke model where quantum efficiency γ is proportional to current density J, i.e., γ=cJ where c is constant. Conditions for negative resistance are as follows: (1) c is smaller than 1 [cm^2sec/coulomb], (2) the density of recombination center in the intrinsic region is high.
- 社団法人応用物理学会の論文
- 1972-11-05
著者
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Kurosu Tateki
Department Of Electronics Faculty Of Engineering Tokai University
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Iida Masamori
Department Of Electronics Faculty Of Engineering Tokai University
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Iida Masamori
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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KUROSU Tateki
Department of Electronics
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