Forward Characteristics of p-Type Diamond / n-Type Silicon Heterojunction Diodes
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概要
- 論文の詳細を見る
Forward characteristics of p-type diamond / n-type silicon heterojunction diode are explained by simple model of current flow mechanism. Both carrier diffusion and the bulk resistance effect are considered in this model. The behavior of high forward current larger than about 50μA can be explained by using this model. Both dependence of current-voltage characteristics on the concentration of boron atoms and on ambient temperature are numerically calculated. Results of calculations are in good agreement with the experimental results.
- 東海大学の論文
著者
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KUROSU Tateki
Department of Electronics, School of Information Technology and Electronics, Tokai University
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KIMURA Hideki
Department of Electronics, School of Information Technology and Electronics, Tokai University
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AKIBA Yukio
Department of Electronics, Faculty of Engineering, Tokai University
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Kurosu T
Department Of Electronics School Of Information Technology And Electronics Tokai University
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Kimura H
Department Of Electronics School Of Information Technology And Electronics Tokai University
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Kimura H
Institute For Materials Research Tohoku University
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Akiba Yukio
Department Of Electronics School Of Engineering
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Akiba Yukio
Science Of Biological Function Life Science Graduate School Of Agricultural Science Tohoku Universit
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Kimura Hideki
Department Of Electronics
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Kurosu Tateki
Department Of Electronics Faculty Of Engineering Tokai University
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Iida M
Department Of Information And Network Tokai University Junior College
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Phetchakul Toempong
Graduate School of Engineering, Tokai University
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Akiba Yukio
Department Of Animal Nutrition Graduate School Of Agricultural Science Tohoku University
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Phetchakul Toempong
Graduate School Of Engineering Tokai University
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Kimura Hideki
Department Of Clinical Laboratory Medicine And Nephrology Faculty Of Medicine Fukui Medical Universi
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Kimura Hideki
Department Of Chemistry And Biotechnology Graduate School Of Engineering The University Of Tokyo
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