Electrical Characteristics and Possibility for High Speed Operation Devices of Si MIS Tunnel Emitter Transistor (Si MIS TET)
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概要
- 論文の詳細を見る
A Si MIS Tunnel Emitter Transistor (Si MIS TET), a new type of bipolar transistor, was fabricated and its electrical characteristics were investigated. The Si MIS TET showed the common emitter mode current gain β=76 at room temperature. The fabricated Si MIS TET was found a good candidate for high speed device because of a short transit time of electron in the inversionbase layer.
- 東海大学の論文
著者
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KUROSU Tateki
Department of Electronics, School of Information Technology and Electronics, Tokai University
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KIMURA Hideki
Department of Electronics, School of Information Technology and Electronics, Tokai University
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Kimura Hideki
Department Of Electronics
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Kurosu Tateki
Department Of Electronics Faculty Of Engineering Tokai University
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Kurosu Tateki
Department Of Electronics School Of Engineering
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YOSHIMOTO Tomomi
Associate Department of Electronic and Information Engeneering, School of Engeneering, Hokkaido Toka
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Yoshimoto Tomomi
Associate Department Of Electronic And Information Engeneering School Of Engeneering Hokkaido Tokai
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Kimura Hideki
Department Of Clinical Laboratory Medicine And Nephrology Faculty Of Medicine Fukui Medical Universi
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Kimura Hideki
Department Of Electronics School Of Engineering
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Kimura Hideki
Department Of Chemistry And Biotechnology Graduate School Of Engineering The University Of Tokyo
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KUROSU Tateki
Department of Electronics
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