An Interpretation of Transient Switching Process in Amorphous Films of As_<30>Te_<48>Ge_<10>Si_<12>

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The switching behaviour in a transient state arising from a voltage pulse applied to a thin film of amorphous semiconductor As_<30>Te_<48>Ge_<10>Si_<12> is experimentally examined at room temperature, and is discussed in terms of a simple theoretical model of stands the electronic characteristics of switching.Both the injection of electrons and that of holes are necessary to initiate the switching action and injected carriers contribute to the current flow as a space-charge limited current.The magnitude of the mobility estimated at the threshold state is of the order of 10^<-4>(m^2V^<-1>s^<-1>).The mobility is a function of the applied voltage under the condition that the applied voltage is higher than the threshold voltage.The charge controlled switching characteristics can be explained by our model based on space-charge overlapping.
社団法人応用物理学会の論文
1978-08-05