Simple Analytical Explanation of Transient Switching Process in Amorphous Semiconductor, As_<30>Te_<48>Ge_<10>Si_<12>

スポンサーリンク

概要

• 論文の詳細を見る

• The transient switching behavior of the amorphous semiconductor As_<30>Te_<48>Ge_<10>Si_<12> is investigated both theoretically and experimentally. A number of transient characteristics can be explained by the transient switching model proposed, based on the concept of space-charge over-lapping for the pure electronic process. It is shown experimentally that the mobility has a voltage derendence, when the applied voltaxe is hisher than the threshold value; μ_n+μ_p=6.8×10^<-9>=V^<-1> exp(aV)(m^2V^<-1> s^<-1>), a=1.9 exp (-2.1×10^6L)(V^<-1>). The experimentally estimated ratio of the mobilities is 27.8. It is shown experimentally that injection both of electrons and holes is necessary to initiate the switching action and that injected carriers contribute to the cur-rent flow as space-charge limited current in the OFF state.

• 社団法人応用物理学会の論文
• 1981-06-05

著者

• Miyazono Toru

  Department Of Electronics Faculty Of Engineering Tokai University

• IIDA Masanori

  Department of Electronics, Faculty of Engineering, Tokai University

• Iida Masanori

  Department Of Electronics Faculty Of Engineering Tokai University

関連論文

• Temperature Dependence of Electrical Conduction Mechanism in Amorphous Semiconductor
• An Interpretation of Transient Switching Process in Amorphous Films of As_Te_Ge_Si_
• Simple Analytical Explanation of Transient Switching Process in Amorphous Semiconductor, As_Te_Ge_Si_
• Negative Photoconductivity Effect with Sublinear Current-Voltage Characteristic in Amorphous Se Film
• Switching Characteristics in Amorphous Semiconductors
• Asymmetric Switching and Memory Characteristics in Amorphous Semiconductor

スポンサーリンク