Electrical Characteristics of I_b/Undoped Diamond Junction Diode at High Temperature
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概要
- 論文の詳細を見る
The electrical property of I_b diamond and characteristics of an I_b/undoped diamond (n-i) junction diode at high ambient temperature are studied. It is clear on examining the Seebeck effect that the I_b diamond shows n-type conduction at temperatures higher than 300℃. The distinct rectifying characteristic of the diamond n-i junction diode is obtained when temperature becomes higher than 700℃. At a low current level, forward current depends exponentially on the applied voltage and the n-value of the diode is 9.8. Ohm's law is dominant in the high current region of the forward characteristics. A band model of the n-i junction which explains the characteristic is proposed.
- 社団法人応用物理学会の論文
- 1996-10-15
著者
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IIDA Masamori
Department of Information and Network, Tokai University Junior College
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AKIBA Yukio
Department of Electronics, Faculty of Engineering, Tokai University
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Akiba Yukio
Department Of Electronics School Of Engineering Tokai University
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Iida Masamori
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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SAKATA Toyokazu
Department of Electronics, School of Engineering, Tokai University
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Akiba Yukio
Department Of Animal Nutrition Graduate School Of Agricultural Science Tohoku University
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Sakata Toyokazu
Department Of Electronics School Of Engineering Tokai University
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