Electrical Switching in Mobility-Gap Materials
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概要
- 論文の詳細を見る
A new model for electrical switching is proposed which is based on the mobility-gap band model developed by Cohen et al., for chalcogenide materials and the electron tunneling through an insulating layer on these materials. Numerical calculations of current-voltage relations show that the switching characteristics depend on a factor with which the tunnel current is determined. Dependence of threshold field on the thickness of specimens is in agreement with experimental observations.
- 社団法人応用物理学会の論文
- 1971-02-05
著者
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Iida Masamori
Department Of Engineering Tokai University
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Iida Masamori
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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Hamada Akira
Department Of Engineering Tokai University
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