Indiffusion and Out-Diffusion Profiles of Substitutional Au in Si Affected by Self-Interstitials and Vacancies

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概要

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• Precise indiffusion and out-diffusion profiles of substitutional Au in Si have been investigated by a numerical method for the nonlinear diffusion equation affected by self-interstitials and vacancies simultaneously. In contrast to usual approximate solutions, a small contribution of self-interstitials in the indiffusion results in a profile specific to a kick-out mechanism, and a small contribution of vacancies in the out-diffusion results in that to a dissociative mechanism. Therefore, both experimental profiles of indiffusion and out-diffusion are required to determine the contribution rate of these point defects. The experimental results indicate that the contribution rate of vacancies for the effective diffusion of Au is about 90% at 900°C, which is very different from previous result.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-06-15

著者

• MOROOKA Masami

  Fukuoka Institute of Technology

• Kajiwara Toshinori

  Fukuoka Institute Of Technology

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• Indiffusion and Out-Diffusion Profiles of Substitutional Au in Si Affected by Self-Interstitials and Vacancies
• Limiting Process for Gold In-Diffusion in Silicon with and without Extended Defects

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