Limiting Process for Gold In-Diffusion in Silicon with and without Extended Defects

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概要

• 論文の詳細を見る

• Gold was in-diffused at 1150℃ into silicon containing extended defects (dislocations or stacking faults) and into defect-free silicon single crystals, and the diffusion-limiting process for the gold in-diffusion was investigated. Gold diffusion in the crystals without defects and that very near the specimen surface in crystals with defects are limited by the diffusion of self-interstitials to the surface. Diffusion in the crystals with defects is limited by the diffusion of interstitial gold atoms from tire surface. In crystals with an extremely low concentration of extended defects, the diffusion is limited by the diffusion of self-interstitials to the defects.

• 社団法人応用物理学会の論文
• 1996-05-15

著者

• MOROOKA Masami

  Fukuoka Institute of Technology

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• Concentration Profiles of Deep Levels Induced by Gold Diffusion in Silicon
• Stacking Fault Induced by Gold Diffusion in Silicon
• Brief Measurement of Diffusion Profiles of Deep Impturities by Moving Schottky Contact
• Indiffusion and Out-Diffusion Profiles of Substitutional Au in Si Affected by Self-Interstitials and Vacancies
• Limiting Process for Gold In-Diffusion in Silicon with and without Extended Defects

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