Brief Measurement of Diffusion Profiles of Deep Impturities by Moving Schottky Contact
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概要
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Long-range diffusion profiles of deep impurities, such as gold in silicon are usually obtained by repeating capacitance measurements after each removal of a considerable surface layer followed by fabrication of a Schottky junction on the surface. However, this method is time-consuming. By moving the Schottky electrode on an angle-lapped surface, the profiles have been obtained in less than one-tenth of the time required using the usual method.
- 社団法人応用物理学会の論文
- 1996-06-15
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