MOROOKA Masami | Fukuoka Institute of Technology
スポンサーリンク
概要
関連著者
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MOROOKA Masami
Fukuoka Institute of Technology
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TAKAHASHI Manabu
Fukuoka Institute of Technology
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HASHIMOTO Fumio
Faculty of Pharmaceutical Sciences, Kumamoto University
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Hashimoto F
Faculty Of Engineering Okayama University
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Yoshida M
Yoshida Semiconductor Lab. Fukuoka Jpn
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Hashimoto Fumio
Faculity Of Science Osaka City University
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Tokita Masahiko
Fukuoka Institute Of Technology
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Kato Tomohiko
Fukuoka Institute Of Technology
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TSURUMI Ichiro
Fukuoka Institute of Technology
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Yoshida M
Functional Materials Research Laboratories Nec Corporation
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YOSHIDA Masayuki
Yoshida Semiconductor Laboralory
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TOMOKAGE Hajime
Department of Electronics, Fukuoka University
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YOSHIDA Masayuki
Kyushu Institute of Design
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Tomokage Hajime
Department Of Electronics Faculty Of Engineering Fukuoka University
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Tomokage Hajime
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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UEDA Fumito
Fukuoka Institute of Technology
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Takahashi M
Semiconductor Leading Edge Technologies Inc
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Kajiwara Toshinori
Fukuoka Institute Of Technology
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FUKASAKO Shinya
Fukuoka Institute of Technology
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HASHIMOTO Fumio
Faculty of Engineering, Okayama University
著作論文
- Temperature Dependence of ESR Lines Related to Phosphorus in Silicon
- Effective Diffusion Coefficient and Controlling Process of P Diffusion in Si Based on the Pair Diffusion Models of Vacancy and Interstitial Mechanisms
- Effect of Polishing on Time Dependence of Average Substitutional Impurity Concentration in Dissociative and Kick-Out Mechanisms
- Concentration Profiles of Deep Levels Induced by Gold Diffusion in Silicon
- Stacking Fault Induced by Gold Diffusion in Silicon
- Brief Measurement of Diffusion Profiles of Deep Impturities by Moving Schottky Contact
- Indiffusion and Out-Diffusion Profiles of Substitutional Au in Si Affected by Self-Interstitials and Vacancies
- Limiting Process for Gold In-Diffusion in Silicon with and without Extended Defects