Relationship between Grown-in Defects in Czochralski Silicon Crystals
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概要
- 論文の詳細を見る
The relationship between flow pattern defects (FPDs), Secco etch pit defects (SEPDs), defects detected by IRlight scattering tomography (LSTDs) and defects detected by an optical precipitate profiler (OPP-defects) was investigated in the same area of as-grown and annealed wafers. It was concluded that the relationship between grown-in defects in as-grown Czochralski silicon crystals is expressed as LSTDs=OPP-defects=FPDsSEPDs. FPDs were decreased after annealing, but LSTDs were still observed at the positions where the LSTDs were detected in the as-grown state. It was found that the origins of FPDs are not annihilated during annealing.
- 社団法人応用物理学会の論文
- 1997-05-15
著者
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Sano M
Sumitomo Metal Ind. Ltd. Saga Jpn
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TSUYA Hideki
Silicon Technology R&D Center, Sumitomo Sitix Corporation
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SANO Masakazu
Silicon Technology R&D Center, Sumitomo Sitix Corporation
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HOURAI Masataka
Silicon Technology R & D Center, Sumitomo Sitix Corporation
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UMENO Shigeru
Silicon Technology R&D Center, Sumitomo Sitix Corporation
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OKUI Masahiko
Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd.
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Hourai Masataka
Silicon Technology Center Sumitomo Sitix Corporation
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UMENO Shigeru
Silicon Technology R&D Center, Sumitomo Sitix Corporation
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UMENO Shigeru
Silicon Technology Center, Sumitomo Sitix Corp.
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SANO Masakazu
Silicon Technology R & D Center, Sumitomo Sitix Corporation
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OKUI Masahiko
Advanced Technology Research Laboratories, Sumitomo Metal Industries Limited.
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TSUYA Hideki
Silicon Technology R&D Center, Sumitomo Sitix Corporation
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TSUYA Hideki
Silicon Technology R & D Center, Sumitomo Sitix Corporation
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