TEM Observation of Defects Induced by Ni Contamination on a Si(100) Surface
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概要
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The behavior of Si(100) surface defects induced by intentional Ni contamination was studied by means of etch-pit observation and transmission electron microscopy. After annealing at 1150℃ for 1 hour in N_2 atmosphere, shallow pits (SP) were observed only on the surface of the wafer. These SP were thought to be attributable to NiSi_2-type silicides formed on the surface by the selected area diffraction pattern. During the additionl thermal oxidation, oxidation-induced stacking faults (OSF) were always formed at each of the large SP but not always at small ones.
- 社団法人応用物理学会の論文
- 1989-03-20
著者
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Sano M
Sumitomo Metal Ind. Ltd. Saga Jpn
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SADAMITSU Shinsuke
Kyushu Electronic Metal Co., Ltd
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HOURAI Masataka
Kyushu Electronic Metal Co., Ltd
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SUMITA Shigeo
Kyushu Electronic Metal Co., Ltd
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FUJINO Nobukatsu
Kyushu Electronic Metal Co., Ltd
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SHIRAIWA Toshio
Osaka Titanium Co., Ltd
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Sumita Shigeo
Kyushu Electronic Metal Co. Ltd
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Sano Masakazu
Kyushu Electronic Metal Co., Ltd
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Shiraiwa Toshio
Osaka Titanium Co. Ltd
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Sadamitsu Shinsuke
Kyushu Electronic Metal Co. Ltd
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