A Model of Thermal Transfer in Czochralski Silicon Molten
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概要
- 論文の詳細を見る
Simultaneous multipoint measurement has been performed to determine the temperature of silicon molten of a Czochralski (CZ) system during the growth of a monocrystalline ingot. A high magnitude of temperature fluctuation was found to be totally random without correlation among temperatures of various points in the molten, a phenomenon which could not be explained by models based on a lamina flow. The magnituge of the fluctuation, however, was observed to be related with effective thermal transfer of the molten. A model which took account of thermal transfer induced by local dynamical random motion, a kind of turbulence, of the molten was proposed. The time-averaged temperature distribution taken from the solution of a static diffusion equation with the effective thermal diffusivity agreed very well with the experimental results.
- 社団法人応用物理学会の論文
- 1991-12-15
著者
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FUJINO Nobukatsu
Kyushu Electronic Metal Co., Ltd
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YAMASHITA Kenichi
Kyushu University
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Yamashita Kenichi
Kyushu Electronic Metal Corp.
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Aoki Toshihiko
Kyushu Electronic Metal Corp.
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SHIRAIWA Toshio
Osaka Titanium Co., Ltd
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KITAGAWA Kunihiko
Kyushu Electronic Metal Corp.
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KAJITA Eiji
Kyushu Electronic Metal Corp.
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Shiraiwa T
Department Of Physical Electronics Tokyo Institute Of Technology
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Shiraiwa Toshio
Osaka Titanium Co. Ltd
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Fujino N
Kyushu Electronic Metal Corp.
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