Transmission Electron Microscopy Observation of Defects Induced by Fe Contamination on Si(100) Surface
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-08-15
著者
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Sasaki Ayako
Kyushu Electronic Metal Co. Ltd
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SADAMITSU Shinsuke
Kyushu Electronic Metal Co., Ltd
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HOURAI Masataka
Kyushu Electronic Metal Co., Ltd
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SUMITA Shigeo
Kyushu Electronic Metal Co., Ltd
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FUJINO Nobukatsu
Kyushu Electronic Metal Co., Ltd
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Sumita Shigeo
Silicon Technology Center Sumitomo Sitix Corporation
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Sadamitsu S
Sumitomo Sitix Corp. Saga Jpn
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Sumita Shigeo
Kyushu Electronic Metal Co. Ltd
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Hourai M
Research And Development Center Sitix Division Sumitomo Metal Industries Ltd.
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Fujino N
Kyushu Electronic Metal Corp.
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Sadamitsu Shinsuke
Kyushu Electronic Metal Co. Ltd
関連論文
- Transmission Electron Microscopy Observation of Defects Induced by Fe Contamination on Si(100) Surface
- Dependence of Grown-in Defect Behavior on Oxygen Concentration in Czoehralski Silicon Crystals
- Formation of Grown-in Defects during Czochralski Silicon Crystal Growth
- A Method of Quantitative Contamination with Metallic Impurities of the Surface of a Silicon Wafer : Semiconductors and Semiconductor Devices
- Influence of Metal Impurities on Leakage Current of Si N^+ P Diode
- Dependence of Gettering Efficiency on Metal Impurities
- TEM Observation of Defects Induced by Ni Contamination on a Si(100) Surface
- Comparison of Gettering Techniques by Means of Intentional Quantitative Cu Contamination : Electrical Properties of Condensed Matter
- A Model of Thermal Transfer in Czochralski Silicon Molten
- Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon
- TEM Observation of Defects Induced by Cu Contamination on Si(100) Surface : Condensed Matter
- Axial Microscopic Distribution of Grown-in Defects in Czochralski-Grown Silicon Crystals
- Degradation of Gate Oxide Integrity by Metal Impurities
- Behavior of Defects Induced by Metallic Impurities on Si(100) Surfaces