TEM Observation of Defects Induced by Cu Contamination on Si(100) Surface : Condensed Matter
スポンサーリンク
概要
- 論文の詳細を見る
The behavior of a Si(100) surface defect induced by intentional Cu contamination was studied with transmission electron microscopy. After annealing at 1150℃ for 1 hour in N_2 atmosphere, colony precipitates lying along (110) planes were observed only on the surface of the wafer. These precipitates were estimated to be Cu_6Si-type silicides by the selected area diffraction pattern. During additional annealing in an oxidation atmosphere, stacking faults were formed from each of colony precipitates. This indicated that colony precipitates were the nucleus of oxidation-induced stacking faults.
- 社団法人応用物理学会の論文
- 1988-10-20
著者
-
SADAMITSU Shinsuke
Kyushu Electronic Metal Co., Ltd
-
SHIRAIWA Toshio
Osaka Titanium Co., Ltd
-
Sumita Shigeo
Kyushu Electronic Metal Co. Ltd
-
Shiraiwa Toshio
Osaka Titanium Co. Ltd
-
FUJINO Nobulatsu
Kyushu Electronic Metal Co., Ltd
-
Fujino Nobulatsu
Kyushu Electronic Metal Co. Ltd
-
Sadamitsu Shinsuke
Kyushu Electronic Metal Co. Ltd
関連論文
- Transmission Electron Microscopy Observation of Defects Induced by Fe Contamination on Si(100) Surface
- A Method of Quantitative Contamination with Metallic Impurities of the Surface of a Silicon Wafer : Semiconductors and Semiconductor Devices
- Influence of Metal Impurities on Leakage Current of Si N^+ P Diode
- Dependence of Gettering Efficiency on Metal Impurities
- TEM Observation of Defects Induced by Ni Contamination on a Si(100) Surface
- Comparison of Gettering Techniques by Means of Intentional Quantitative Cu Contamination : Electrical Properties of Condensed Matter
- A Model of Thermal Transfer in Czochralski Silicon Molten
- TEM Observation of Defects Induced by Cu Contamination on Si(100) Surface : Condensed Matter
- Degradation of Gate Oxide Integrity by Metal Impurities
- Behavior of Defects Induced by Metallic Impurities on Si(100) Surfaces