Formation of Grown-in Defects during Czochralski Silicon Crystal Growth

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Transmission Electron Microscopy Observation of Defects Induced by Fe Contamination on Si(100) Surface
Atomic force Microscope Observation of the Change in Shape and Subsequent Disappearance of "Crystal-Originated Particles" after Hydrogen-Atmosphere Thermal Annealing
A New Method for Transmission Electron Microscope Observation of Grown-in Defects in As-Grown Czochralski Silicon (111) Crystals
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Microstructure Observation of "Crystal-Originated Particles" on Silicon Wafers
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Dependence of Grown-in Defect Behavior on Oxygen Concentration in Czoehralski Silicon Crystals
Formation of Grown-in Defects during Czochralski Silicon Crystal Growth
Relationship between Grown-in Defects in Czochralski Silicon Crystals
Improved Intrinsic Gettering Technique for High-Temperature-Treated CZ Silicon Wafers
A Method of Quantitative Contamination with Metallic Impurities of the Surface of a Silicon Wafer : Semiconductors and Semiconductor Devices
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Growth of ZnS_xSe_ Crystals from ZnSe-Sb_2S_3-Sb_2Se_3 Solutions
Influence of Metal Impurities on Leakage Current of Si N^+ P Diode
Dependence of Gettering Efficiency on Metal Impurities
TEM Observation of Defects Induced by Ni Contamination on a Si(100) Surface
Comparison of Gettering Techniques by Means of Intentional Quantitative Cu Contamination : Electrical Properties of Condensed Matter
Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon

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