A Model for the Formation of Oxidation-Induced Stacking Faults in Czochralski Silicon
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概要
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The mechanism of oxidation-induced stacking fault (OSF) formation in Czochralski silicon (CZ-Si) crystals was investigated by transmission electron microscopy observations of the initial stages of OSF growth. OSFs were observed to be always generated at one of the <110> edges of platelet oxygen precipitates. We observed previously that these platelet oxygen precititates had an expansive strain field in the direction parallel to the precipitate plate and a compressive strain field normal to the plate. Silicon self-interstitials having compressive strain are probably attracted to the expansive strain field of the precipitates, and condense to form stacking faults. A new model for OSF generation is presented taking into consideration the strain field around self-interstitials and oxygen precipitates.
- 社団法人応用物理学会の論文
- 1995-05-15
著者
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SUEOKA Koji
Advanced Technology Research Laboratories, Sumitomo Metal Industries Limited
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MARSDEN Kieran
Silicon Technology Research & Development Center, Sumitomo Sitix Corporation
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SUEOKA Koji
Advanced Technology Research Laboratories, Sumitomo Metal Industries Limited.
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SHIGEMATSU Tatsuhiko
Silicon Technology Center, Sumitomo Sitix Corp.
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SADAMITSU Shinsuke
Silicon Technology Center, Sumitomo Sitix Corp.
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OKUI Masahiko
Advanced Technology Research Laboratories, Sumitomo Metal Industries Limited.
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- Pinning Effect on Punched-Out Dislocations in Silicon Wafers Investigated Using Indentation Method
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