Slip Length in Silicon Wafers Caused by Indentation during Heat Treatment
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概要
- 論文の詳細を見る
The relationship between the length of slip dislocation and applied stress in silicon wafers was investigated. Czochralski (CZ) silicon wafers [boron-doped, interstitial oxygen concentration [Oi] = (13.8-14.0) × 10^<17>/cm^3], indented by a Vickers hardness tester, were thermally stressed by insertion into and withdrawal from a horizontal furnace. The length of slip dislocations generated during the heat treatment was measured by X-ray topography (XRT). To estimate the applied thermal stress during the heat treatment, temperature distribution in the wafer was measured with a thermocouple. From the results of XRT observations, slip dislocations were found to be generated at peripheral and central regions during the insertion and the withdrawal, respectively. The length of slip dislocations was calculated using the experimentally estimated thermal stress. It was found that the length of slip dislocation could be explained well by the model, with consideration of the applied stress and the dislocation velocity.
- 社団法人応用物理学会の論文
- 1998-10-15
著者
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NAKATSUKA Masahiro
Department of Laser Power Photonics, Institute of Laser Engineering, Osaka University
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Sueoka Kazuhisa
Nanoelectronics Laboratory Graduate School Of Engineering Hokkaido University
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Morimoto Nobuyuki
Research And Development Center Sitix Division Sumitomo Metal Industries Limited
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Nakai M
Institute Of Laser Engineering Osaka University
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Akatsuka M
Corporate Research And Development Laboratories Sumitomo Metal Industries Limited
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Katahama Hisashi
Advanced Technology Research Laboratories, Surnitomo Metal Industries, Ltd.
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AKATSUKA Masanori
Advanced Technology Research Laboratories, Sumitomo Metal Industries Limited
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SUEOKA Koji
Advanced Technology Research Laboratories, Sumitomo Metal Industries Limited
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ADACHI Naoshi
Research and Development Center, Sumitomo Sitix Corporation
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Katahama H
Advanced Technology Research Laboratories Sumitomo Metal Industries Limited
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Adachi Naoshi
Research And Development Center Sumitomo Sitix Corporation
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Katahama Hisashi
Advanced Technology Research Laboratories, Sumitomo Metal Industries Limited
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Akatsuka Masanori
Department of Laser Power Photonics, Institute of Laser Engineering, Osaka University
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