Photoluminescence of GaAs Tip Apex Excited by Evanescent Wave
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概要
- 論文の詳細を見る
To characterize the optical properties of a semiconductor tip apex or semiconductor nanoparticles attached to a tip apex, an experimental setup to detect the photoluminescence (PL) spectra of the specimens excited by the evanescent wave was constructed. The tip-prism surface distance dependency of the PL spectra was observed by means of a prism covered with conducting thin films which were used to define the origin of the separation by detecting the tunneling current. It was demonstrated that the PL intensity exponentially depends upon the separation.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-06-30
著者
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Sueoka Kazuhisa
Nanoelectronics Laboratory Graduate School Of Engineering Hokkaido University
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Hori Hirokazu
Department Of Electrical Engineering And Computer Science Faculty Of Engineering Yamanashi Universit
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HATTORI Satoshi
Nanoelectronics Laboratory, Graduate School of Engineering, Hokkaido University
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Mukasa Koichi
Nanoelectronic Laboratory Graduate School Of Engineering Hokkaido University
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Ohdaira Yasuo
Department of Engineering, Yamanashi University, Kofu 400-8510, Japan
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Ohdaira Yasuo
Department of Electrical and Electronic Eng., Niigata University, Ikarashi 2-8050, Niigata 950-2181, Japan
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Hattori Satoshi
Nanoelectronics Laboratory, Graduate School of Engineering, Hokkaido University, Sapporo 060-8628, Japan
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Sueoka Kazuhisa
Nanoelectronics Laboratory, Graduate School of Engineering, Hokkaido University, Sapporo 060-8628, Japan
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Hori Hirokazu
Department of Engineering, Yamanashi University, Kofu 400-8510, Japan
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Mukasa Kōichi
Nanoelectronics Laboratory, Graduate School of Engineering, Hokkaido University, Sapporo 060-8628, Japan
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