Effect of Oxide Precipitate Size on Slip Generation in Large Diameter Epitaxial Wafers
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概要
- 論文の詳細を見る
The effect of oxide precipitate size on slip generation was investigated in Czochralski (CZ), p/p-, p/p+ and p/p++ epitaxial wafers during device manufacturing. In high-temperature processes where maximum temperature reaches 1100℃, the mechanical strength of epitaxial wafers was far superior to that of CZ wafers. In contrast, the mechanical strength of all wafers was sufficiently maintained in low-temperature processes where maximum temperature reaches 1050℃. The slip dislocation generation can be explained according to the size of oxide precipitate formed in each wafer; precipitates larger than approximately 200 nm can generate slip dislocations.
- 社団法人応用物理学会の論文
- 1998-09-15
著者
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NAKATSUKA Masahiro
Department of Laser Power Photonics, Institute of Laser Engineering, Osaka University
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Sueoka Kazuhisa
Nanoelectronics Laboratory Graduate School Of Engineering Hokkaido University
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Nakai M
Institute Of Laser Engineering Osaka University
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Akatsuka M
Corporate Research And Development Laboratories Sumitomo Metal Industries Limited
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Katahama Hisashi
Advanced Technology Research Laboratories, Surnitomo Metal Industries, Ltd.
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AKATSUKA Masanori
Advanced Technology Research Laboratories, Sumitomo Metal Industries Limited
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SUEOKA Koji
Advanced Technology Research Laboratories, Sumitomo Metal Industries Limited
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KOIE Yasuo
Technology Research and Development Center, Sumitomo Sitix Corporation
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SADAMITSU Shinsuke
Technology Research and Development Center, Sumitomo Sitix Corporation
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Katahama H
Advanced Technology Research Laboratories Sumitomo Metal Industries Limited
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Sadamitsu Shinsuke
Technology Research And Development Center Sumitomo Sitix Corporation
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Koie Yasuo
Technology Research And Development Center Sumitomo Sitix Corporation
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Katahama Hisashi
Advanced Technology Research Laboratories, Sumitomo Metal Industries Limited
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Akatsuka Masanori
Department of Laser Power Photonics, Institute of Laser Engineering, Osaka University
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