Effect of Rapid Thermal Annealing on Oxygen Precipitation Behavior in Silicon Wafers

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The effect of rapid thermal annealing (RTA) on oxygen precipitation behavior in Czochralski silicon wafers was investigated with an emphasis on the RTA ambient, temperature and cooling rate. It was found that (i) anomalous oxygen precipitation (AOP) was observed in the case of RTA temperature at $\geqq 1240$°C with cooling rates of $\geqq 25$°C/s in Ar and in the case of RTA temperature at $\geqq 1200$°C with cooling rates of $\geqq 5$°C/s in N2, while AOP was not observed in O2, (ii) an M-like depth profile of precipitate density appeared for the cooling rates of $\geqq 50$°C/s in Ar, and $\geqq 25$°C/s in N2, and (iii) the width of the precipitate denuded zone was larger than the width of outdiffused oxygen in the case of RTA in Ar. The relationships of thermal equilibrium concentrations C$_{J}^{*}$ and diffusion constants DJ were estimated to be $C_{\text{I}}^{*}<C_{\text{V}}^{*}$ and $D_{\text{I}}>D_{\text{V}}$ (I: interstitial, V: vacancy) from the experimental results of RTA in Ar and the calculated results using the Voronkov model.
2001-05-15

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