Pinning Effect of Punched-Out Dislocations in Carbon-, Nitrogen- or Boron-Doped Silicon Wafers

概要

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The pinning effect of punched-out dislocations in carbon-, nitrogen- or boron-doped Czochralski-grown silicon wafers was investigated using an indentation method. The size of a rosette pattern which corresponds to the distance of dislocation movement was measured after heat-treatment without any thermal stress. It was found that the rosette size decreased by carbon, nitrogen and boron doping with a concentration of $2.0\times 10^{16}\text{--}1.4\times 10^{17}$, $5.3\times 10^{13}\text{--}5.3\times 10^{14}$ and $2.0\times 10^{18}\text{--}2.0\times 10^{19}$ atoms/cm3, respectively. The rosette size was approximately proportional to the power $-1/3$ of carbon, $-1/10$ of nitrogen and $-1/10$ of boron concentration, which differed from the reported power of $-2/3$ of oxygen concentration.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
2001-03-15