Gettering Characteristics of Heavy Metal Impurities in Silicon Wafers with Polysilicon Back Seal and Internal Gettering
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-11-15
著者
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Koike Yasuo
Silicon Technology Center Sumitomo Sitix Corporation
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Koike Yasuo
Silicon Technology R&d Center Sumitomo Sitix Corporation
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Sano Masakazu
Silicon Technology R&d Center Sumitomo Sitix Corporation
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Ogushi S
Silicon Technology R&d Center Sumitomo Sitix Corporation
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Ogushi Satoshi
Silicon Technology R&d Center Sumitomo Sitix Corporation
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SADAMITSU Shinsuke
Silicon Technology Research & Development Center, Sumitomo Sitix Corporation
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Marsden Kieran
Sumitomo Sitix Silicon Inc.
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Sadamitsu Shinsuke
Silicon Technology R&d Center Sumitomo Sitix Corporation
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SANO Masakazu
Silicon Technology R & D Center, Sumitomo Sitix Corporation
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SADAMITSU Shinsuke
Silicon Technology Center, Sumitomo Sitix Corp.
関連論文
- Efficiency of Boron Getterimg for Iron Irmpurities in p/p^+ Epitaxial Silicon Wafers
- Behavior of Defects in Heavily Boron Doped Czochralski Silicon
- Relationship between Grown-in Defects in Czochralski Silicon Crystals
- Generation of Oxidation-Induced Stacking Faults in Czochralski-Grown Silicon Crystals Exhibiting a Ring-like Distributed Stacking Fault Region
- Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon
- Gettering Characteristics of Heavy Metal Impurities in Silicon Wafers with Polysilicon Back Seal and Internal Gettering
- Axial Microscopic Distribution of Grown-in Defects in Czochralski-Grown Silicon Crystals
- A Model for the Formation of Oxidation-Induced Stacking Faults in Czochralski Silicon