In Situ Growth of Isotopically Enriched ^<28>Si Nanowires Using the Floating-Zone(FZ) Melting Method : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-01-15
著者
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SUZUKI Hajime
National Insitute for Fusion Science
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鈴木 博
理化学研究所仁科加速器研究センター川合理論物理学研究室
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Numazawa Takenori
National Institute For Materials Science
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Nozawa Takashi
Institute Of Advanced Energy Kyoto University
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Araki H
Graduate School Of Science And Technology Niigata University
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Araki H
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Araki Hitoshi
Graduate School Of Science And Technology Niigata University
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Suzuki H
Solid State Division Hamamatsu Photonics K.k.
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ARAKI Hiroshi
National Institute for Materials Science
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NODA Tetsuji
National Institute for Materials Science
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SUZUKI Hiroshi
National Research Center for Profozoan Diseases, Obihiro University of Agriculture and Veterinary Me
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Suzuki H
Meidensha Corp. Tokyo Jpn
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Suzuki Hisanori
Solid State Division Hamamatsu Photonics K.k.
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HU Quanli
Japan Science and Technology Corporation
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鈴木 久男
静岡大 創造科学技術大学院
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Noda T
National Institute For Materials Science
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LI Guoqing
National Institute for Materials Science
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HU Quanhi
National Institute for Materials Science
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Satoh H
Department Of Veterinary Public Health School Of Veterinary Medicine Rakuno-gakuen University
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Noda Tetsuji
National Inst. For Materials Sci. Tsukuba Jpn
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