Hydrogen Gas Generation by Splitting Aqueous Water Using n-Type GaN Photoelectrode with Anodic Oxidation
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概要
- 論文の詳細を見る
Hydrogen gas generation from a counterelectrode was clearly observed for the first time using light-illuminated n-type GaN as a working photoelectrode in an electrolyte. The application of extra bias to a working electrode was required to obtain a sufficient volume of generated gas. The reactions at the GaN photoelectrode were both GaN decomposition and water oxidization, simultaneously.
- Japan Society of Applied Physicsの論文
- 2005-04-10
著者
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Karasawa Takeshi
Research And Development Center Technology And Engineering Division Lamp Company Usio Incorporated
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Fujii Katsushi
Nakamura Inhomogeneous Crystal Project Exploratory Research For Advanced Technology Japan Science An
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Ohkawa Kazuhiro
Nakamura Inhomogeneous Crystal Project Exploratory Research For Advanced Technology Japan Science An
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Karasawa Takeshi
Research and Development Center, Technology and Engineering Division, Lamp Company, Usio Incorporated, 1194 Sazuchi, Bessho-cho, Himeji, Hyogo 671-0224, Japan
関連論文
- Hydrogen Gas Generation by Splitting Aqueous Water Using n-Type GaN Photoelectrode with Anodic Oxidation
- Photoelectrochemical Properties of p-Type GaN in Comparison with n-Type GaN
- Photoelectrochemical Properties of Nonpolar and Semipolar GaN
- Photoelectrochemical Properties of InGaN for H2 Generation from Aqueous Water
- Hydrogen Gas Generation by Splitting Aqueous Water Using n-Type GaN Photoelectrode with Anodic Oxidation