Fujii Katsushi | Nakamura Inhomogeneous Crystal Project Exploratory Research For Advanced Technology Japan Science An
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概要
- 同名の論文著者
- Nakamura Inhomogeneous Crystal Project Exploratory Research For Advanced Technology Japan Science Anの論文著者
関連著者
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Fujii Katsushi
Nakamura Inhomogeneous Crystal Project Exploratory Research For Advanced Technology Japan Science An
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Ohkawa Kazuhiro
Nakamura Inhomogeneous Crystal Project Exploratory Research For Advanced Technology Japan Science An
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DENBAARS Steven
Materials Department and Electrical Engineering Department, University of California
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Baker Troy
Materials Department University Of California Santa Barbara
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Masui Hisashi
Materials Department College Of Engineering University Of California
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Yao Takafumi
Center For Interdisciplinary Research Tohoku University
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IZA Michael
Materials and Electrical Engineering Departments, University of California
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Karasawa Takeshi
Research And Development Center Technology And Engineering Division Lamp Company Usio Incorporated
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Kaeding John
Materials And Electrical Engineering Departments University Of California
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FUJII Katsushi
Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science
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OHKAWA Kazuhiro
Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science
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Kusakabe Kazuhide
Department Of Applied Physics Faculty Of Science Tokyo University Of Science
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Nakamura Shuji
Materials Department University Of Cahfornia
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Sato Hitoshi
Materials Department And Electrical Engineering Department University Of California
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Speck James
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Karasawa Takeshi
Research and Development Center, Technology and Engineering Division, Lamp Company, Usio Incorporated, 1194 Sazuchi, Bessho-cho, Himeji, Hyogo 671-0224, Japan
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Baker Troy
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Iwaki Yasuhiro
Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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DenBaars Steven
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Ohkawa Kazuhiro
Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Japan
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Ohkawa Kazuhiro
Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Tokyo University of Science Group, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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Kaeding John
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Fujii Katsushi
Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Tokyo University of Science Group, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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Sato Hitoshi
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Kusakabe Kazuhide
Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Japan
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Sato Hitoshi
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
著作論文
- Photoelectrochemical Properties of p-Type GaN in Comparison with n-Type GaN
- Photoelectrochemical Properties of Nonpolar and Semipolar GaN
- Photoelectrochemical Properties of InGaN for H2 Generation from Aqueous Water
- Hydrogen Gas Generation by Splitting Aqueous Water Using n-Type GaN Photoelectrode with Anodic Oxidation