Photoelectrochemical Properties of p-Type GaN in Comparison with n-Type GaN
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-08-10
著者
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FUJII Katsushi
Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science
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OHKAWA Kazuhiro
Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science
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Fujii Katsushi
Nakamura Inhomogeneous Crystal Project Exploratory Research For Advanced Technology Japan Science An
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Ohkawa Kazuhiro
Nakamura Inhomogeneous Crystal Project Exploratory Research For Advanced Technology Japan Science An
関連論文
- Hydrogen Gas Generation by Splitting Aqueous Water Using n-Type GaN Photoelectrode with Anodic Oxidation
- Photoelectrochemical Properties of p-Type GaN in Comparison with n-Type GaN
- Photoelectrochemical Properties of Nonpolar and Semipolar GaN
- Photoelectrochemical Properties of InGaN for H2 Generation from Aqueous Water
- Hydrogen Gas Generation by Splitting Aqueous Water Using n-Type GaN Photoelectrode with Anodic Oxidation