ZnSe-Based Diode Lasers with Stripe-Geometry Fabricated by Ion Bombardment
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概要
- 論文の詳細を見る
Current confinement of ZnSe-based diode lasers on p-GaAs substrates has been achieved by ion bombardment. Nitrogen ions were used for the bombardment to produce a high-resistivity region in n-Zn(S)Se cladding layer. The threshold current was reduced by one-third with the introduction of this current-blocking region. The devices showed laser action up to 150 K under pulsed current injection.
- 社団法人応用物理学会の論文
- 1993-12-01
著者
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Hayashi Shinji
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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Hayashi S
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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Narusawa Tadashi
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Hayashi Shigenori
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Hayashi Shigenori
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation
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Hayashi Shigenori
Faculty Of Engineering Osaka University
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Matsushima Tomoaki
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Mitsuyu T
Hirao Active Glass Project Erato Japan Science And Technology Corporation
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Mitsuyu Tsuneo
Central Research Laboratories Matsushita Electric Ind. Co. Lid.
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TSUJIMURA Ayumu
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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Tsujimura Ayumu
Advanced Technology Research Laboratories Matsushita Electric Ind.co. Ltd.
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OHKAWA Kazuhiro
Central Research Laboratories, Matsushita Electric
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YOSHII Shigeo
Central Research Laboratories, Matsushita Electric
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HAYASHI Shigeo
Central Research Laboratories, Matsushita Electric
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Takeishi Hidemi
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Takeishi Hidemi
Central Research Laboratories Matsushita Electric
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Yoshii S
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Yoshii S
Ibaraki Electrical Communication Lab.
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TAKAHASHI Yasuhito
Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
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Ohkawa K
Sci. Univ. Tokyo Tokyo Jpn
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Takahashi Yasuhito
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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