Cavity Parameters of ZnCdSe/ZnSe Single-Quantum-Well Separate-Confinement-Heterostructure Laser Diodes
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概要
- 論文の詳細を見る
The cavity length dependence of the external differential quantum efficiency and the threshold current density was investigated for ZnCdSe/ZnSe single-quantum-well separate-confinement-heterostructure laser diodes at 77K. An internal loss of 1.5 cm^_lt;-1>, an internal quantum efficiency of 61% for stimulated emission, a transparency current density of 1.8 kA/(cm^2・μm) and a gain factor of 0.36 cm^2・μm/A were obtained. The transparency current density is 3-4 times larger than that for bulk GaAs. Improvement in the internal quantum efficiency for spontaneous emission will lead to reduction of the operation current.
- 社団法人応用物理学会の論文
- 1993-12-01
著者
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Hayashi Shinji
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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Hayashi S
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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Hayashi Shigenori
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Hayashi Shigenori
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation
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Hayashi Shigenori
Faculty Of Engineering Osaka University
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Matsushima Tomoaki
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Mitsuyu T
Hirao Active Glass Project Erato Japan Science And Technology Corporation
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Mitsuyu Tsuneo
Central Research Laboratories Matsushita Electric Ind. Co. Lid.
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TSUJIMURA Ayumu
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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Tsujimura Ayumu
Advanced Technology Research Laboratories Matsushita Electric Ind.co. Ltd.
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OHKAWA Kazuhiro
Central Research Laboratories, Matsushita Electric
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YOSHII Shigeo
Central Research Laboratories, Matsushita Electric
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HAYASHI Shigeo
Central Research Laboratories, Matsushita Electric
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Yoshii S
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Yoshii S
Ibaraki Electrical Communication Lab.
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Ohkawa K
Sci. Univ. Tokyo Tokyo Jpn
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