Low-Temperature Preparation of Doped Hydrogenated Amorphous Silicon Films by AC-Biased Microwave ECR Plasma CVD Method
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概要
- 論文の詳細を見る
Phosphorus and boron doped hydrogenated amorphous silicon films were deposited by microwave electron-cyclotron-resonance (ECR) plasma CVD with an AC (20 kHz) substrate bias. Electrical properties of the films have been investigated. The dark conductivity gradually increased with the increase of AC substrate bias power. Above the 50 W bias power, the conductivities of about 10^<-6> (Ω・cm)^<-1> and about 10^<-7> (Ω・cm)^<-1> were obtained for both P-doped and B-doped films respectively, under the low substrate temperature below 50℃. These doped films were applied to the fabrication of the a-Si:H junction diode with a structure of glass/Cr/pin/Al. A diode quality factor of about 2.2 was evaluated and a ratio of forward current to reverse current of more than 10^4 was obtained at 1.5 V.
- 社団法人応用物理学会の論文
- 1990-10-20
著者
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Kitagawa Masatoshi
Central Research Laboratories Matsushita Electric Industrial Co. Lid.
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Kitagawa Masatoshi
Central Research Laboratories Matsushita Electric Ind. Co. Ltd.
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Hirao Takashi
Central Research Laboratories Matsushita Electric Ind. Co. Ltd.
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HIRAO Takashi
Central Research Laboratories, Matsushita Electric Industrial Co., Lid.
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