Fabrication of a-Si:H Thin Film Transistors on 4-inch Glass Substrates by a Large Area Ion Doping Technique
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概要
- 論文の詳細を見る
We developed a large area ion doping apparatus with an rf ion source of 50 cm in diameter. Charge accumulation during ion doping was suppressed by using a double grid. We fabricated a-Si:H TFT's on a 4-inch glass substrate by using the doping apparatus. By optimizing the thickness of the passivation film of TFT's, a field effect mobility, threshold voltage and an ON/OFF current ratio of 0.6 cm^2/V・s, 4.9 V and 10^7, respectively, were obtained. We confirmed the uniformity of electrical properties for TFT's on 4-in. glass substrates to be about ±2%. These characteristics of TFT's are suitable for switching elements in a large area LCD.
- 社団法人応用物理学会の論文
- 1991-01-01
著者
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Kitagawa Masatoshi
Central Research Laboratories Matsushita Electric Ind. Co. Ltd.
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Hirano Takashi
Central Research Laboratories, Matsushita Electric Industrial Co. Ltd.
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Yoshida Akihisa
Central Research Laboratories Matsushita Electric Ind. Co. Ltd.
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Andoh Y
Osaka Univ. Osaka Jpn
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Nukayama Masaaki
Research and Development Div., Nissin Electric Co., Ltd.
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Andoh Yasunori
Research and Development Div., Nissin Electric Co., Ltd.
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Nukayama Masaaki
Research And Development Div. Nissin Electric Co. Ltd.
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Hirano Takashi
Central Research Laboratories Matsushita Electric Ind. Co. Ltd.
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