Paramagnetic Centers Created in Si-SiO_2 Structure by Ion Implantation

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1975-07-05

著者

• IZUMI Tomio

  Department of Electronic Engineering, Faculty of Engineering, Tokai University

• Izumi Tomio

  Department Of Electronics Faculty Of Engineering Tokai University

• Matsumori Tokue

  Department Of Electronics Faculty Of Engineering Tokai University

関連論文

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• Hydrogen Concentration and Bond Configurations in Silicon Nitride Films Prepared by ECR Plasma CVD Method
• Influence of Deposition Conditions on the Properties of Silicon Nitride Films Prepared by the ECR Plasma CVD Method
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• Defect Structures in SiO_2 Films Doped with Si-nanocrystal
• ESR of Diamond Films Deposited by CVD Method
• Carrier Concentration Dependence of Photoacoustic Signal Intensity of Silicon
• Temperature Dependence of Electrical Properties in Si-Implanted Semi-Insulating GaAs
• Impurity Effect on Recombination Processes in InP
• Paramagnetic Centers Created in Si-SiO_2 Structure by Ion Implantation

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