Carrier Concentration Dependence of Photoacoustic Signal Intensity of Silicon
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概要
- 論文の詳細を見る
Photoacoustic (PA) spectra near the energy gap of n- and p-type silicon were investigated at various carrier concentrations. The PA signal intensity at energies lower than the energy gap increased with increasing carrier concentration for both types. The increase is considered to be due to the increase in the heat generated in the samples following free carrier absorption and nonradiative relaxation processes. The PA signal intensity increased drastically above a carrier concentration of 10^<17>cm^<-3> for n-type and above that of 10^<16> cm^<-3> for p-type silicon.
- 社団法人応用物理学会の論文
- 1999-05-30
著者
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Uehara Fumiya
Department Of Living Science Tokai University
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Matsumori Tokue
Department Of Electronics Faculty Of Engineering Tokai University
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KUWAHATA Hiroshi
Department of Electronics, Faculty of Engineering, Tokai University
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MUTO Nobuo
Department of Electronics, Faculty of Engineering, Tokai University
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Muto Nobuo
Department Of Electrical Engineering Meiji University
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