Impurity Effect on Recombination Processes in InP
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概要
- 論文の詳細を見る
The effects of impurities (S, Sn, Fe and Zn) doped in InP on recombination processes were investigated using photoluminescence (PL) and photoacoustic (PA) spectroscopies. The recombination processes were affected by the impurity levels in the bandgap and by the large strain which was induced by the impurities in InP. The processes were radiative for InP with shallow impurity levels such as S-doped and Sn-doped samples and nonradiative for InP with deep impurity levels such as Fe-doped and Zn-doped samples. The results of PL and PA measurements were in a reciprocal correlation. However, both spectra were observed for undoped InP with large strain induced by impurities such as Si. These relationships were explained using three types of configuration coordinate diagram.
- 社団法人応用物理学会の論文
- 1996-05-30
著者
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Yoshinaga Hiroshi
Department Of Applied Physics Faculty Of Engineering Osaka University
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Yoshinaga Hiroshi
Department Of Electronics Faculty Of Engineering Tokai University
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Uehara Fumiya
Department Of Resources And Environmental Science Faculty Of Humanities And Culture Tokai University
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Uehara Fumiya
Department Of Living Science Tokai University
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Matsumori Tokue
Department Of Electronics Faculty Of Engineering Tokai University
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