Temperature Dependence of Electrical Properties in Si-Implanted Semi-Insulating GaAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-02-20
著者
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Shigetomi Shigeru
Department Of Physics Kurume University
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Matsumori T
Tokai Univ. Kanagawa Jpn
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Matsumori Tokue
Department Of Electronics Faculty Of Engineering Tokai University
関連論文
- Carrier Transport Mechanisms of InSe p-n Homojunction : Semiconductors and Semiconductor Devices
- Annealing Behavior of Zn-Doped p-Type InSe
- Photoconductivity and Photo-Hall Effect of p-Type InSe Single Crystals
- Optical Absorption Edge in γ-InSe(Excitons and Phonons)
- Optical and Electrical Properties of Layer Semiconductor n-InSe Doped with Sn
- Optical and Electrical Properties of p-GaAe Doped with Sb
- Annealing Behavior of Layer Semiconductor p-InSe Doped with Hg
- Electrical Properties of p- and n-GaSe Doped with As and Ge
- Radiative Centers in Layer Semiconductor p-GaSe Doped with Mn
- Photoluminescence Spectra of n-GaSe Layered Semiconductor Doped with Sn
- Near Band Edge Photoacoustic Spectra of p-Si Single Crystals
- Detection of Stable Radicals in Malignant Ascites and Pleural Effusion by Electron Spin Resonance
- Impurity Levels in Layered Semiconductor GaS Doped with Cu
- Carrier Concentration Dependence of Photoacoustic Signal Intensity of Silicon
- Temperature Dependence of Electrical Properties in Si-Implanted Semi-Insulating GaAs
- Impurity Effect on Recombination Processes in InP
- Paramagnetic Centers Created in Si-SiO_2 Structure by Ion Implantation
- Temperature Dependence of Photoluminescence in Layered Semiconductor n-GaS Doped with Sn
- Effect of Annealing on Electrical and Optical Properties of Si-Implanted GaAs
- Crystalline InSe Films Prepared by RF-Sputtering Technique
- Photoluminescence Studies of Layered Semiconductor GaS Doped with Ge
- Annealing Behavior of Deep Trap Level in p-GaTe
- Optical and Electrical Characteristics of Layered Semiconductor p-InSe Doped with Sb