Optical and Electrical Characteristics of Layered Semiconductor p-InSe Doped with Sb
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概要
- 論文の詳細を見る
The impurity levels in Sb-doped p-InSe have been investigated using photoluminescence (PL), Hall effect and optical absorption measurements. The emission band at 1.02 eV is observed in the PL spectra of the samples doped with 0.05 to 0.5 at.% Sb. From the dependence of the excitation intensity of the PL intensity and peak energy, we find that the 1.02 eV emission band is due to the transition related to a donor-acceptor pair. The deep acceptor level located approximately 0.4 eV above the valence band is detected using the Hall effect and optical absorption measurements. The deep acceptor level is probably associated with the defects formed by Sb atoms in the interlayer.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-11-15
著者
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Ikari Tetsuo
Department Of Electrical And Electronic Engineering Miyazaki University
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Shigetomi Shigeru
Department Of Physics Kurume University
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Shigetomi Shigeru
Department of Physics, Kurume University, 67 Asahi-machi, Kurme, Fukuoka 830-0011, Japan
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Ikari Tetsuo
Department of Electronics, Miyazaki University, 1-1 Gakuenkibanadai, Miyazaki 889-2155, Japan
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