Crystalline InSe Films Prepared by RF-Sputtering Technique
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概要
- 論文の詳細を見る
The X-ray diffraction, optical absorption and Raman spectra of rf-sputtered InSe films are measured as a function of annealing temperature. The films annealed at 400℃ have a crystalline structure and the c-axis in the rhombohedral phase is oriented perpendicular to the substrate plane. The optical properties in crystalline films follow the same mechanism as that of the InSe single crystal.
- 社団法人応用物理学会の論文
- 1991-12-15
著者
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Shigetomi Shigeru
Department Of Physics Kurume University
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IKARI Tesuo
Department of Electrical Engineering, Miyazaki University
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Ikari T
Department Of Electrical Engineering Miyazaki University
関連論文
- Carrier Transport Mechanisms of InSe p-n Homojunction : Semiconductors and Semiconductor Devices
- Annealing Behavior of Zn-Doped p-Type InSe
- Photoconductivity and Photo-Hall Effect of p-Type InSe Single Crystals
- Optical Absorption Edge in γ-InSe(Excitons and Phonons)
- Optical and Electrical Properties of Layer Semiconductor n-InSe Doped with Sn
- Optical and Electrical Properties of p-GaAe Doped with Sb
- Annealing Behavior of Layer Semiconductor p-InSe Doped with Hg
- Electrical Properties of p- and n-GaSe Doped with As and Ge
- Radiative Centers in Layer Semiconductor p-GaSe Doped with Mn
- Photoluminescence Spectra of n-GaSe Layered Semiconductor Doped with Sn
- Near Band Edge Photoacoustic Spectra of p-Si Single Crystals
- Impurity Levels in Layered Semiconductor GaS Doped with Cu
- Temperature Dependence of Electrical Properties in Si-Implanted Semi-Insulating GaAs
- Temperature Dependence of Photoluminescence in Layered Semiconductor n-GaS Doped with Sn
- Effect of Annealing on Electrical and Optical Properties of Si-Implanted GaAs
- Crystalline InSe Films Prepared by RF-Sputtering Technique
- Photoluminescence Studies of Layered Semiconductor GaS Doped with Ge
- Annealing Behavior of Deep Trap Level in p-GaTe
- Optical and Electrical Characteristics of Layered Semiconductor p-InSe Doped with Sb