Photoluminescence Studies of Layered Semiconductor GaS Doped with Ge
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概要
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The radiative recombination mechanisms of Ge-doped GaS have been investigated by photoluminescence measurements. The photoluminescence spectrum (at 77 K) related to the impurity levels is dominated by two emission bands at 2.30 and 1.96 eV. From the temperature dependences of the photoluminescence intensity and peak energy, it is found that the 2.30 eV emission band is due to the transition between donor and acceptor levels. The 1.96 eV emission band is related to the donor–vacancy complex center.
- 2009-03-25
著者
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Ikari Tetsuo
Department Of Electrical And Electronic Engineering Miyazaki University
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Shigetomi Shigeru
Department Of Physics Kurume University
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Ikari Tetsuo
Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuenkibanadai, Miyazaki 889-2155, Japan
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Shigetomi Shigeru
Department of Physics, Kurume University, 67 Asahi-machi, Kurume, Fukuoka 830-0011, Japan
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