Growth and Annealing of ZnO Films Grown by Spray Pyrolysis
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概要
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Undoped and In-doped ZnO films on glass substrate were successfully grown by spray pyrolysis at 500 °C. The samples were annealed under N2 atmosphere between 100 and 600 °C for 5 min. The lattice constants and grain sizes of both samples were unchanged with increasing annealing temperature. However, the photoluminescence intensity of the In-doped sample markedly decreased in comparison with that of the undoped sample with increasing annealing temperature. The carrier concentration increased with increasing annealing temperature. These findings indicated that the number of nonradiative recombination centers of the In-doped ZnO samples markedly increased.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-10-25
著者
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Ikari Tetsuo
Department Of Electrical And Electronic Engineering Miyazaki University
-
Yoshino Kenji
Department Of Anatomy Nihon University School Of Dentistry At Matsudo
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YONETA Minoru
Department of Applied Physics, Okayama University of Science
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Oyama Satoshi
Department Of Social Informatics Graduate School Of Informatics Kyoto University
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Oshima Minoru
Department of Electrical and Electronic Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan
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Yoneta Minoru
Department of Applied Physics, Okayama University of Science, 1-1 Ridai-cho, Okayama 700-0005, Japan
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Oyama Satoshi
Department of Electrical and Electronic Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan
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