Piezoelectric Photothermal Spectra of Co Doped ZnO Semiconductor
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概要
- 論文の詳細を見る
Piezoelectric photothermal spectroscopy (PPTS) is a powerful tool for investigating optical properties of semiconductors. Temperature dependence of the PPT signal intensity of the Co-doped ZnO semiconductor was measured from 4.2 to 300K. The Co concentration dependence of the PPT signal intensity was also studied to clarify the effect of doping with transition metals. In the case of doping at a low level, Co atoms form deep impurity levels in the ZnO matrices in the spectral region from 1.2 to 1.7eV. However, for samples doped at higher levels, many crystal field split-off levels from localized C0^<2+> ions appeared at approximately 0.7-1.2 and 1.7-2.4eV and these two bands became dominant in the spectra. The doping effect was investigated from the point of view of nonradiative transition for the first time. [DOI: 10.1143/JJAP.41.3371]
- 社団法人応用物理学会の論文
- 2002-05-30
著者
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Ikari T
Miyazaki Univ. Miyazaki Jpn
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Ikari Tetsuo
Department Of Electronic Engineering Miyazaki University
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Ikari Tetsuo
Department Of Electrical And Electronic Engineering Miyazaki University
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Ikari Tetsuo
Department Of Electrical And Electronic Engineering University Of Miyazaki
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FUKUYAMA Atsuhiko
Department of Electronics, Miyazaki University
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Sakai Kiyomi
Kansai Advanced Research Center Communications Research Laboratory The Ministry Of Posts And Telecom
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Sakai K
宮崎大
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Toyoda Taro
Department Of Applied Physics And Chemistry The University Of Electro-communications
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FUKUYAMA Atsuhiko
Faculty of Engineering, Miyazaki University
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Fukuyama A
Miyazaki Univ. Miyazaki Jpn
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Fukuyama Atsuhiko
Department Of Materials Science Miyazaki University
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SAKAI Kentaro
Materials Research Center, Miyazaki University
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Toyoda Taro
Department Of Applied Physics And Chemistry University Of Electro-communications
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Fukuyama Atsuhiko
Department of Applied Physics, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan
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