Near Band Edge Non-radiative Recombination of Si Single Crystal Investigated by Piezoelectric Photothermal Spectroscopy
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概要
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Piezoelectric photothermal spectroscopy (PPTS) measurements were conducted on p- and n-type silicon, $\langle 100\rangle$ orientation samples. We showed that a PPTS signal bearing a lower energy edge around 1.048 eV at room temperature was due to band-to-band transitions with optical mode phonon (0.064 eV) absorption. Similarly, a signal bearing an edge above 1.19 eV, observed at temperature less than 200 K was due to band-to-band transitions involving the phonon emission. The two signals were observed in both p- and n-type samples. These results indicated that very low absorption coefficient in indirect semiconductor can be effectively observed by using the proposed PPTS technique. An additional signal bearing a broad peak around $1.18\pm 0.01$ eV at room temperature was also observed for both types of samples. We proposed that the broad-peak signal was due to surface states.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-02-15
著者
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Memon Aftab
Department Of Electrical And Electronic Engineering Miyazaki University
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Ikari Tetsuo
Department Of Electrical And Electronic Engineering Miyazaki University
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Fukuyama Atsuhiko
Department of Applied Physics, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan
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Fukuyama Atsuhiko
Department of Materials Science, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan
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Ikari Tetsuo
Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan
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Memon Aftab
Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan
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