Annealing Behavior of Deep Trap Level in p-GaTe
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概要
- 論文の詳細を見る
The deep levels in GaTe single crystal have beeninvestigated by deep-level transient spectroscopy measurements.The hole-trapping level is detected at 0.8 eV above the valenceband. It is found that the deep level is associated with thedefect or defect complex and the concentration increases withincreasing annealing temperature.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1998-06-15
著者
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Ikari Tetsuo
Department Of Electrical And Electronic Engineering Miyazaki University
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Shigetomi Shigeru
Department Of Physics Kurume University
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Nakashima Hiroshi
Advanced Science And Technology Center For Cooperative Research Kyushu University
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Shigetomi Shigeru
Department of Physics, Kurume University, 67 Asahi-machi,
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Nakashima Hiroshi
Advanced Science and Technology Center for Cooperative
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Ikari Tetsuo
Department of Electronics, Miyazaki University, 1-1
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