Distribution of Substitutional Nickel Atoms in Dislocated Silicon Crystal
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概要
- 論文の詳細を見る
Diffusion profiles of substitutional nickel atoms in dislocated silicon crystal are investigated using deep-level transient spectroscopy (DLTS). The profiles are analyzed on the basis of the theory of the dissociative mechanism of diffusion. It is found that dislocations play an important role as the sinks and sources of vacancy annihilation and generation, respectively, giving rise to the flat distribution of the U-shaped distribution observed in the crystal bulk.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-11-15
著者
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Ikari Tetsuo
Department Of Electrical And Electronic Engineering Miyazaki University
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Kitagawa Hajime
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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Tanaka Shuji
Department of Information Electronics, Fukuoka Institute of Technology, 3-30-1 Wajiro-Higashi, Higashi-ku, Fukuoka 811-0295, Japan
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Tanaka Shuji
Department of Electronic Materials Engineering, Fukuoka Institute of Technology,
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