Majority-Carrier Capture Cross Section of Amphoteric Nickel Center in Silicon Studied by Isothermal Capacitance Transient Spectroscopy
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概要
- 論文の詳細を見る
Isothermal capacitance transient spectroscopy (ICTS) has been used to measure majority-carrier capture cross section of nickel centers in silicon. Capture cross sections obtained are temperature-independent with values of 3.2×10-17 cm2 for electron capture at the nickel acceptor center in n-type silicon and 1.8×10-16 cm2 for hole capture at the nickel donor center in p-type silicon. These capture cross sections are associated with the neutral capture of the majority carriers at the amphoteric nickel centers.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1996-09-15
著者
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Kitagawa Hajime
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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Tanaka Shuji
Department of Electronic Materials Engineering, Fukuoka Institute of Technology,
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Matsushita Kaiji
Niihama Technical High School, Kitashin-Machi, Niihama, Ehime 762, Japan
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TANAKA Shuji
Department of Chemistry, Faculty of Science, Kyushu University
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