In-Diffusion and Annealing Processes of Substitutional Nickel Atoms in Dislocation-Free Silicon
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2001-05-01
著者
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TANAKA Shuji
Department of Nanomechanics, Graduate School of Engineering, Tohoku University
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Ikari T
Miyazaki Univ. Miyazaki Jpn
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Ikari Tetsuo
Department Of Electronic Engineering Miyazaki University
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Ikari Tetsuo
Department Of Electrical And Electronic Engineering Miyazaki University
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Ikari Tetsuo
Department Of Electrical And Electronic Engineering University Of Miyazaki
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Ikari Tetsuo
Faculty Of Engineering University Of Miyazaki
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Tanaka Shuji
Deportment Of Information Electronics Fukuoka Institute Of Technology
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Tanaka S
Fukuoka Inst. Technol. Fukuoka Jpn
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KITAGAWA Hajime
Department of Electronic Materials Engineering, Fukuoka Institute of Technology
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Kitagawa H
Canon Inc. Utsunomiya Jpn
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Kitagawa Hajime
Deportment Of Information Electronics Fukuoka Institute Of Technology
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Kitagawa Hajime
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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Tanaka Shuji
Department Of Nanomechanics Tohoku University
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Tanaka S
High Energy Accelerator Res. Organization (kek)
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Tanaka Shuji
Department Of Information Electronics Faculty Of Engineering Fukuoka Institute Of Technology
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Tanaka Shuji
Department Of Electronics Faculty Of Engineering Fukuoka Institute Of Technology
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Kitagawa Hajime
Department Of Electronics Fukuoka Institute Of Technology
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Tanaka Shuji
Department Of Electronics Fukuoka Institute Of Technology
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Tanaka Shuji
Department of Electronic Materials Engineering, Fukuoka Institute of Technology,
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TANAKA Shuji
Department of Chemistry, Faculty of Science, Kyushu University
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