Distribution of Substitutional Nickel Atoms in Dislocation-Free Silicon Studied by Deep Level Transient Spectroscopy and Theoretical Analyses Based on the Dissociative Mechanism of Diffusion
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-11-15
著者
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Ikari T
Miyazaki Univ. Miyazaki Jpn
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Ikari Tetsuo
Department Of Electronic Engineering Miyazaki University
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Ikari Tetsuo
Department Of Electrical And Electronic Engineering Miyazaki University
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Ikari Tetsuo
Department Of Electrical And Electronic Engineering University Of Miyazaki
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Ikari Tetsuo
Faculty Of Engineering University Of Miyazaki
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Tanaka Shuji
Deportment Of Information Electronics Fukuoka Institute Of Technology
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Tanaka S
Fukuoka Inst. Technol. Fukuoka Jpn
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Kitagawa H
Canon Inc. Utsunomiya Jpn
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Kitagawa Hajime
Deportment Of Information Electronics Fukuoka Institute Of Technology
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Tanaka S
High Energy Accelerator Res. Organization (kek)
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TANAKA Shuji
Deportment of Information Electronics, Fukuoka Institute of Technology
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